| PART |
Description |
Maker |
| DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| DD28F032SA DD28F032SA-070 DD28F032SA-080 |
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
|
Intel Corporation
|
| SST39VF-800A-554C-B3KE SST39VF-800A-554C-B3QE SST3 |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology Inc.
Silicon Storage Technology, Inc
|
| PM39F010 PM39F010-55JCE PM39F010-55PCE PM39F010-70 |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra, Inc]
|
| DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F0 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
|
INTEL[Intel Corporation]
|
| 28F016SA |
16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M1 Mx 16, 2 Mx 8) FlashFile存储
|
Intel Corp.
|
| SST39SF040-70-4C-NHE SST39SF020A-70-4I-WHE SST39SF |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Microchip Technology
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| SST34HF1601-90-4C-LFP SST34HF1621-70-4C-LFP SST34H |
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory 16兆位并行快闪2 / 4兆位的SRAM ComboMemory
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
